Enhanced resistive switching performance in bilayer Pt/TiO<sub>2</sub>/Co<sub>3</sub>O<sub>4</sub>/Pt memory device
نویسندگان
چکیده
In this work, the bilayer Pt/TiO2/Co3O4/Pt and single-layer Pt/TiO2/Pt memory devices were fabricated for investigating their resistive switching characteristics. The statistical parameters revealed enhanced performance in device, instance, more centralized operating voltages current, as well lower power consumption. analysis of conductive mechanisms showed that Schottky emission Ohmic responsible OFF ON states devices. filament mode combined with fitting results was used to illustrate effect, which provided a microscopic model deeper understanding behavior Our indicated properties TiO2-based random access (RRAM) could be improved by inserting Co3O4 layer.
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ژورنال
عنوان ژورنال: Materials research express
سال: 2021
ISSN: ['2053-1591']
DOI: https://doi.org/10.1088/2053-1591/abd730